Wafer-Level Self-Packaging Design and Fabrication of MEMS Capacitive Pressure Sensors.

This paper reports a MEMS capacitive pressure sensor (CPS) based on the operating principle of touch mode. The CPS was designed and fabricated using wafer-level self-packaged MEMS processes. The variable capacitance sensing structure was vacuum-sealed in a cavity using the Si-glass anodic bonding technique, and the embedded Al feedthrough lines at the Si-glass interface were used to realize the electrical connections between the parallel plate electrodes and the electrode pads through Al vias. The optimal design of the CPS structure was performed to trade-off the performance and reliability using finite element simulation. The CPS based on a circular-shaped diaphragm with a radius of 2000 µm and a thickness of 40 µm exhibits good comprehensive performance with a sensitivity of 52.3 pF/MPa and a nonlinearity of 2.7%FS in the pressure range of 100-500 kPa when the ambient temperature is less than 50 °C.

Mixed-gas CH4/CO2/CO detection based on linear variable optical filter and thermopile detector array.

This paper presents the design, fabrication, and characterization of a middle-infrared (MIR) linear variable optical filter (LVOF) and thermopile detectors that will be used in a miniaturized mixed gas detector for CH4/CO2/CO measurement. The LVOF was designed as a tapered-cavity Fabry-Pérot optical filter, which can transform the MIR continuous spectrum into multiple narrow band-pass spectra with peak wavelength in linear variation. Multi-layer dielectric structures were used to fabricate the Bragg reflectors on the both sides of tapered cavity as well as the antireflective film combined with the function of out-of-band rejection. The uncooled thermopile detectors were designed and fabricated as a multiple-thermocouple suspension structure using micro-electro-mechanical system technology. Experimentally, the LVOF exhibits a mean full-width-at-half-maximum of 400 nm and mean peak transmittance of 70% at the wavelength range of 2.3~5 µm. The thermopile detectors exhibit a responsivity of 146 µV/°C at the condition of room temperature. It is demonstrated that the detectors can achieve the quantification and identification of CH4/CO2/CO mixed gas.

Fabrications of L-band LiNbO3-based SAW Resonators for Aerospace Applications.

High frequency surface acoustic wave (SAW) technology offers many opportunities for aerospace applications in passive wireless sensing and communication. This paper presents the design, simulation, fabrication, and test of an L-band SAW resonator based on 128° Y-X LiNbO3 substrate. The design parameters of SAW resonator were optimized by the finite element (FEM) method and the coupling-of-mode (COM) theory. Electron-beam lithography (EBL) technology was used to fabricate the submicron-scale of interdigital transducers (IDTs) and grating reflectors. The effects of some key EBL processes (e.g., the use of electron beam resist, the choice of metal deposition methods, the charge-accumulation effect, and the proximity-effect) on the fabrication precision of SAW devices were discussed. Experimentally, the LiNbO3-based SAW resonators fabricated using improved EBL technology exhibits a Rayleigh wave resonance peaks at 1.55 GHz with return loss about -12dB, and quality factor Q is 517. Based on this SAW resonator, the temperature and strain sensing tests were performed, respectively. The experimental results exhibit a well linear dependence of temperature/strain on frequency-shift, with a temperature sensitivity of 125.4 kHz/C and a strain sensitivity of -831 Hz/µÎµ, respectively.

Betavoltaic Enhancement Using Defect-Engineered TiO2 Nanotube Arrays through Electrochemical Reduction in Organic Electrolytes.

Utilizing high-energy beta particles emitted from radioisotopes for long-lifetime betavoltaic cells is a great challenge due to low energy conversion efficiency. Here, we report a betavoltaic cell fabricated using TiO2 nanotube arrays (TNTAs) electrochemically reduced in ethylene glycol electrolyte (EGECR-TNTAs) for the enhancement of the betavoltaic effect. The electrochemical reduction of TNTAs using high cathodic bias in organic electrolytes is indeed a facile and effective strategy to induce in situ self-doping of oxygen vacancy (OV) and Ti3+ defects. The black EGECR-TNTAs are highly stable with a significantly narrower band gap and higher electrical conductivity as well as UV-vis-NIR light absorption. A 20 mCi of 63Ni betavoltaic cell based on the reduced TNTAs exhibits a maximum ECE of 3.79% with open-circuit voltage of 1.04 V, short-circuit current density of 117.5 nA cm-2, and a maximum power density of 39.2 nW cm-2. The betavoltaic enhancement can be attributed to the enhanced charge carrier transport and separation as well as multiple exciton generation of electron-hole pairs due the generation of OV and Ti3+ interstitial bands below the conductive band of TiO2.

Defect-induced betavoltaic enhancement in black titania nanotube arrays.

Utilizing high-energy beta particles emitted from radioisotopes for long-lifetime betavoltaic cells is a great challenge due to their low energy conversion efficiency (ECE). Here we report a betavoltaic cell fabricated using black titania nanotube arrays (TiO2 NTAs) by electrochemical anodization and Ar-annealing techniques. The obtained samples show enhanced electrical conductivity as well as Vis-NIR light absorption by the introduction of oxygen vacancy (OV) and Ti3+ defects in reduced TiO2-x NTAs. A 20 mCi63 Ni source was assembled into TiO2 NTAs to form a sandwich-type betavoltaic cell. By I-V measurements, the Ar-annealed TiO2 NTAs at 650 °C exhibited a maximum ECE of 3.65% with Voc = 1.13 V, Jsc = 103.3 nA cm-2, and Pmax = 37 nW cm-2. In comparison with air-annealed TiO2 NTAs, the enhancement of the betavoltaic effect in reduced TiO2-x NTAs can be attributed to the suppression of e-h recombination induced by the generation of OV and Ti3+ defects, serving as electron donors as well as electron traps that not only contribute to the increase of electrical conductance, but also facilitate the charge carrier separation.

UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors.

The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs) limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D) wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO) for ultraviolet (UV) photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm-2, on/off current ratio of 3.01 × 104, and responsivity of 1.83 A·W-1 when a UV irradiation of 3.26 mW·cm-2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite.

Electrochemically Reduced Graphene Oxide on Well-Aligned Titanium Dioxide Nanotube Arrays for Betavoltaic Enhancement.

We report a novel betavoltaic device with significant conversion efficiency by using electrochemically reduced graphene oxide (ERGO) on TiO2 nanotube arrays (TNTAs) for enhancing the absorption of beta radiation as well as the transportation of carriers. ERGO on TNTAs (G-TNTAs) were prepared by electrochemical anodization and subsequently cyclic voltammetry techniques. A 10 mCi of (63)Ni/Ni source was assembled to G-TNTAs to form the sandwich-type betavoltaic devices (Ni/(63)Ni/G-TNTAs/Ti). By I-V measurements, the optimum betavoltaic device exhibits a significant effective energy conversion efficiency of 26.55% with an open-circuit voltage of 2.38 V and a short-circuit current of 14.69 nAcm(-2). The experimental results indicate that G-TNTAs are a high-potential nanocomposite for developing betavoltaic batteries.

Reliability Design and Electro-Thermal-Optical Simulation of Bridge-Style Infrared Thermal Emitters.

Designs and simulations of silicon-based micro-electromechanical systems (MEMS) infrared (IR) thermal emitters for gas sensing application are presented. The IR thermal emitter is designed as a bridge-style hotplate (BSH) structure suspended on a silicon frame for realizing a good thermal isolation between hotplate and frame. For investigating the reliability of BSH structure, three kinds of fillet structures were designed in the contact corner between hotplate and frame. A 3-dimensional finite element method (3D-FEM) is used to investigate the electro-thermal, thermal-mechanical, and thermal-optical properties of BSH IR emitter using software COMSOLTM (COMSOL 4.3b, COMSOL Inc., Stockholm, Sweden). The simulation results show that the BSH with oval fillet has the lowest stress distribution and smoothest flows of stress streamlines, while the BSH with square fillet has the highest temperature and stress distribution. The thermal-optical and thermal-response simulations further indicate that the BSH with oval fillet is the optimal design for a reliable IR thermal emitter in spite of having slight inadequacies in emission intensity and modulation bandwidth in comparison with other two structures.

Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery.

The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 µm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10(15) cm(-3), by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics.

Design and simulation of betavoltaic battery using large-grain polysilicon.

In this paper, we present the design and simulation of a p-n junction betavoltaic battery based on large-grain polysilicon. By the Monte Carlo simulation, the average penetration depth were obtained, according to which the optimal depletion region width was designed. The carriers transport model of large-grain polysilicon is used to determine the diffusion length of minority carrier. By optimizing the doping concentration, the maximum power conversion efficiency can be achieved to be 0.90% with a 10 mCi/cm(2) Ni-63 source radiation.